JPH0532908B2 - - Google Patents

Info

Publication number
JPH0532908B2
JPH0532908B2 JP58034157A JP3415783A JPH0532908B2 JP H0532908 B2 JPH0532908 B2 JP H0532908B2 JP 58034157 A JP58034157 A JP 58034157A JP 3415783 A JP3415783 A JP 3415783A JP H0532908 B2 JPH0532908 B2 JP H0532908B2
Authority
JP
Japan
Prior art keywords
voltage
type
channel mos
breakdown voltage
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58034157A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59158546A (ja
Inventor
Masaharu Taniguchi
Yukio Myazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58034157A priority Critical patent/JPS59158546A/ja
Publication of JPS59158546A publication Critical patent/JPS59158546A/ja
Publication of JPH0532908B2 publication Critical patent/JPH0532908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58034157A 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置 Granted JPS59158546A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58034157A JPS59158546A (ja) 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58034157A JPS59158546A (ja) 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置

Publications (2)

Publication Number Publication Date
JPS59158546A JPS59158546A (ja) 1984-09-08
JPH0532908B2 true JPH0532908B2 (en]) 1993-05-18

Family

ID=12406364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58034157A Granted JPS59158546A (ja) 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置

Country Status (1)

Country Link
JP (1) JPS59158546A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01122153A (ja) * 1987-11-05 1989-05-15 Fuji Electric Co Ltd Ｃｍｏｓ半導体回路装置
JP2508826B2 (ja) * 1987-11-24 1996-06-19 日本電気株式会社 半導体装置
EP0357410B1 (en) * 1988-09-01 1993-11-03 Fujitsu Limited Semiconductor integrated circuit device
JP2011176163A (ja) * 2010-02-25 2011-09-08 Panasonic Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPS59158546A (ja) 1984-09-08

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